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| 25TTS...S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A Anode 2 DESCRIPTION/FEATURES The 25TTS...S High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 C junction temperature. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level. D2PAK 13 Cathode Gate PRODUCT SUMMARY VT at 16 A ITSM VRRM < 1.25 V 300 A 800 to 1600 V OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 m) copper Aluminum IMS, RthCA = 15 C/W Aluminum IMS with heatsink, RthCA = 5 C/W Note * TA = 55 C, TJ = 125 C, footprint 300 mm2 SINGLE-PHASE BRIDGE 3.5 8.5 16.5 THREE-PHASE BRIDGE 5.5 13.5 25.0 A UNITS MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ 16 A, TJ = 25 C TEST CONDITIONS Sinusoidal waveform VALUES 16 25 800 to 1600 300 1.25 500 150 - 40 to 125 UNITS A V A V V/s A/s C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 800 1200 1600 VDRM, MAXIMUM PEAK DIRECT VOLTAGE V 800 1200 1600 10 IRRM/IDRM, AT 125 C mA 25TTS08S 25TTS12S 25TTS16S Document Number: 93704 Revision: 20-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 25TTS...S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Maximum on-state voltage drop On-state slope resistance Threshold voltage Maximum reverse and direct leakage current SYMBOL IT(AV) IRMS ITSM I2t I2t VTM rt VT(TO) IRM/IDM IH IL dV/dt dI/dt 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied 16 A, TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C 25TTS08, 25TTS12 25TTS16 TEST CONDITIONS TC = 93 C, 180 conduction half sine wave VALUES TYP. MAX. 16 25 300 350 450 630 6300 1.25 12.0 1.0 VR = Rated VRRM/VDRM Anode supply = 6 V, resistive load, initial IT = 1 A 100 0.5 10 100 150 mA A2 s A2s V m V A UNITS Holding current Maximum latching current Maximum rate of rise of off-state voltage Maximum rate of rise of turned-on current Anode supply = 6 V, resistive load 200 500 150 V/s A/s TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) + IGM - VGM Anode supply = 6 V, resistive load, TJ = - 10 C Maximum required DC gate current to trigger IGT Anode supply = 6 V, resistive load, TJ = 25 C Anode supply = 6 V, resistive load, TJ = 125 C Anode supply = 6 V, resistive load, TJ = - 10 C Maximum required DC gate voltage to trigger Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger VGT Anode supply = 6 V, resistive load, TJ = 25 C Anode supply = 6 V, resistive load, TJ = 125 C VGD IGD TJ = 125 C, VDRM = Rated value TEST CONDITIONS VALUES 8.0 2.0 1.5 10 60 45 20 2.5 2.0 1.0 0.25 2.0 mA V mA UNITS W A V SWITCHING PARAMETER Typical turn-on time Typical reverse recovery time Typical turn-off time SYMBOL tgt trr tq TJ = 25 C TJ = 125 C TEST CONDITIONS VALUES 0.9 4 110 s UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93704 Revision: 20-Jun-08 25TTS...S High Voltage Series Surface Mountable Phase Control SCR, 16 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) Approximate weight SYMBOL TJ, TStg TS RthJC RthJA (1) For 10 s (1.6 mm from case) DC operation TEST CONDITIONS VALUES - 40 to 125 240 1.1 C/W 40 2 0.07 25TTS08S Marking device Case style D2PAK (SMD-220) 25TTS12S 25TTS16S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m] copper 40 C/W For recommended footprint and soldering techniques refer to application note #AN-994 g oz. UNITS C Vishay High Power Products Document Number: 93704 Revision: 20-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 25TTS...S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A Maximum Allowable Case T empera ture (C) Maximum Averag e On-state Power Loss (W) 130 25T S S T .. eries R thJC (DC) = 1.1 C/ W 35 30 25 20 RMS Limit 15 10 5 0 0 5 10 15 20 25 30 Avera ge On-sta te Current (A) Conduction Period 120 DC 180 120 90 60 30 Conduc tion Angle 110 30 100 60 90 120 180 90 0 5 10 15 20 Average On-sta te Current (A) 25T S S T .. eries T J = 125C Fig. 1 - Current Rating Characteristics Maximum Allowable Case T emperature (C) 130 Fig. 4 - On-State Power Loss Characteristics 350 120 ine Pea k Half S Wave On-sta te Current (A) 25T S S T .. eries R thJC (DC) = 1.1 C/ W 300 At Any R ated Load Condition And With Rated V RRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s 110 Conduction Period 250 100 90 60 30 80 0 5 10 90 120 180 15 20 DC 25 30 200 25T S S T .. eries 150 1 10 100 Number Of Equal Amplitude Half Cyc le Current Puls (N) es Average On-sta te Current (A) Fig. 2 - Current Rating Characteristics Maximum Averag e On-state Power Loss (W) 25 180 120 90 60 30 RMSLimit Peak Half S Wa ve On-state Current (A) ine Fig. 5 - Maximum Non-Repetitive Surge Current 400 350 300 250 200 150 25T S S T .. eries 100 0.01 20 15 Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control Of Cond uc tion Ma y Not Be Ma inta ined. Initia l T = 125C J No Voltage Rea pp lied Rated VRRM Reapp lied 10 Conduc tion Angle 5 25T S S T .. eries TJ= 125C 0 0 4 8 12 16 20 Avera ge On-state Current (A) 0.1 Pulse T rain Duration (s) 1 Fig. 3 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93704 Revision: 20-Jun-08 25TTS...S High Voltage Series Surface Mountable Phase Control SCR, 16 A 1000 Instantaneous On-state Current (A) Vishay High Power Products 100 TJ= 25C 10 TJ= 125C 25T S S T .. eries 1 0 1 2 3 4 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics T ransient T hermal Imped anc e Z thJC (C/W) 10 S teady S tate Value (DC Opera tion) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 S ingle Pulse 25T S S T .. eries 0.01 0.0001 0.1 0.001 0.01 0.1 1 10 S quare Wave Pulse Duration (s) Fig. 8 - Gate Characteristics 100 Instantaneous Gate Voltage (V) R tangular gate pulse ec a)R ommended load line for ec rated di/ dt: 10 V, 20 ohms tr = 0.5 s tp >= 6 s , b)Rec ommended load line for <= 30% rated d i/ dt: 10 V, 65 ohms 10 tr = 1 s tp >= 6 s , (1) (2) (3) (4) (a ) (b) PGM = 40 W, tp = 1 ms PGM = 20 W, tp = 2 ms PGM = 8 W, tp = 5 ms PGM = 4 W, tp = 10 ms T = -10 C J T = 25 C J J T = 125 C 1 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 25T S S T .. eries 0.1 1 Frequency Limited by PG(AV) 10 100 Instantaneous Gate Current (A) Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 93704 Revision: 20-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 25TTS...S High Voltage Series Vishay High Power Products Surface Mountable Phase Control SCR, 16 A ORDERING INFORMATION TABLE Device code 25 1 1 2 3 4 5 6 7 T 2 - T 3 S 4 16 5 S 6 TRL 7 8 Current rating (25 = 25 A) Circuit configuration: T = Single thyristor Package: T = TO-220AC Type of silicon: Standard recovery rectifier Voltage code x 100 = VRRM S = TO-220 D2PAK (SMD-220) version None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 08 = 800 V 12 = 1200 V 16 = 1600 V 8 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95046 http://www.vishay.com/doc?95054 http://www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93704 Revision: 20-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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